A common use of low temperature plasmas is in the area known as wafer etching in which a plasma impacts a wafer in order to etch various microelectronic devices such as memory. One advantage to this method is that the etching is much cleaner and uniform resulting in better quality control. The ions are the plasma species that does the etching due to their larger mass. We broadly calling this application “plasma processing”. In plasma processing, the plasma is generated using capacitively coupled (CCP) or inductively coupled methods (ICP) or a combination of both. In our example, we assume a pre-loaded plasma in the simulation.